NONVOLATILE MEMORIES USING SRBI2TA2O9 FERROELECTRICS

Authors
JONES RE CHU PY JIANG B MELNICK BM TAYLOR DJ WHITE BE ZAFAR S PRICE D ZURCHER P GILLESPIE SJ OTSUKI T SUMI T JUDAI Y UEMOTO Y FUJII E HAYASHI S MORIWAKI N AZUMA M SHIMADA Y ARITA K HIRANO H NAKANE J NAKAKUM T KANO G
Citation
Re. Jones et al., NONVOLATILE MEMORIES USING SRBI2TA2O9 FERROELECTRICS, Integrated ferroelectrics, 17(1-4), 1997, pp. 21-30
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
17
Issue
1-4
Year of publication
1997
Pages
21 - 30
Database
ISI
SICI code
1058-4587(1997)17:1-4<21:NMUSF>2.0.ZU;2-Q
Abstract
Ferroelectric non-volatile memories (FENVM) are fabricated using spin- coat and fire deposition of the SrBi2Ta2O9 layered perovskite ferroele ctric. Test memories using a 2 transistor-2 capacitor bit cell, top co ntacts to capacitors and single level metal were fabricated. We report here on the integration and electrical characteristics of fully funct ional 1 Kbit test memories.