EFFECTS OF SUBSTRATE MODIFICATION ON THE GROWTH AND CHARACTERISTICS OF MOCVD PZT

Authors
KIM D KIM TY CHUNG I CHUNG CW LEE JS
Citation
D. Kim et al., EFFECTS OF SUBSTRATE MODIFICATION ON THE GROWTH AND CHARACTERISTICS OF MOCVD PZT, Integrated ferroelectrics, 17(1-4), 1997, pp. 67-79
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
17
Issue
1-4
Year of publication
1997
Pages
67 - 79
Database
ISI
SICI code
1058-4587(1997)17:1-4<67:EOSMOT>2.0.ZU;2-Z
Abstract
Pb(ZrxTi1-x)O-3 thin films(PZT) were deposited on Pt/Ti/SiO2/Si(100) a nd RuO2/Pt/Ti/SiO2/Si(100) substrates by metal-organic chemical vapor deposit ion(MOCVD). The surface morphology of the Pt substrate was alt ered with the deposition temperature and thickness. The variations in the microstructure of PZT films were investigated as a function of sub strate morphology. In addition, the effects' of RuO2/Pt multilayer ele ctrode on the microstructure and electrical properties of PZT capacito r were also studied. Finally, the PZT capacitors integrated on 4'' waf er with multilayer electrode were evaluated.