EFFECT OF RAPID THERMAL ANNEALING ON THE INTERFACE-TRAP DENSITY BETWEEN PT AND (BA,SR)TIO3 THIN-FILM

We determined the electron density trapped at the Pt/BST interface in Pt/(Ba,Sr)TiO3/Pt MIM capacitor. The electron densities trapped at the top-Pt/BST interface and the bottom-Pt/PST interface were calculated to be constant (2 similar to 3 x 10(12) cm(-2)) for all the as-deposit ed films of varying thicknesses. Rapid thermal annealing (RTA) was att empted to reduce the interface trapped electron density of MIM capacit or. The MIM capacitors were post-annealed at 650 degrees C for 30 seco nds in oxygen and nitrogen atmosphere. As a result, the trapped electr on densities were reduced to one third compared with those of the as-d eposited samples. And leakage current density of the annealed samples also decreased drastically. So the rapid thermal annealing process is thought to be very effective in reducing leakage current densities of BST MIM capacitors.