MATERIALS SPECIFICATION FOR MCM-D DECOUPLING CAPACITORS USING PZ, PZT, PLZT AND BST DIELECTRICS

Authors
BLAND T PATEL A WRIGHT R SETHI R DENNIS P WHITAKER P KIRBY P HYDES A BRANFIELD M VIZARD C GRANTHAM A WEDD M
Citation
T. Bland et al., MATERIALS SPECIFICATION FOR MCM-D DECOUPLING CAPACITORS USING PZ, PZT, PLZT AND BST DIELECTRICS, Integrated ferroelectrics, 17(1-4), 1997, pp. 205
Citations number
2
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
17
Issue
1-4
Year of publication
1997
Database
ISI
SICI code
1058-4587(1997)17:1-4<205:MSFMDC>2.0.ZU;2-7
Abstract
The desired electrical properties of decoupling capacitors for use in an existing MCM-D process have been defined. Two types of dielectric h ave been investigated, sol-gel deposited P(L)ZT and dual ion beam sput tered (DIBS) BST. Their electrical properties have been measured and c ompared against this target. Decoupling capacitors have been fabricate d and integrated with an MCM-D process, the resulting processing issue s are discussed.