SPUTTER-DEPOSITION OF SRTIO3 THIN-FILMS FOR VOLTAGE TUNABLE CAPACITORS

Citation
Mv. Raymond et al., SPUTTER-DEPOSITION OF SRTIO3 THIN-FILMS FOR VOLTAGE TUNABLE CAPACITORS, Integrated ferroelectrics, 17(1-4), 1997, pp. 247-256
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
17
Issue
1-4
Year of publication
1997
Pages
247 - 256
Database
ISI
SICI code
1058-4587(1997)17:1-4<247:SOSTFV>2.0.ZU;2-H
Abstract
The electric field dependence of the dielectric constant of ferroelect ric and related materials can be used to fabricate voltage tunable fil ters for microwave applications. In this study, the growth, structure, and dielectric properties of sputter deposited thin films will be dis cussed. In particular, SrTiO3 thin films were deposited onto (100)(pc) LaAlO3 and r-cut sapphire substrates using RF magnetron sputtering at elevated temperatures. The films deposited on LaAlO3 were highly (00l ) oriented possessing a cube-on-cube heteroepitaxial structure, while the films deposited directly on sapphire were polycrystalline. We have studied the influence of deposition conditions and post deposition an nealing on the crystal quality, microstructure, and electrical propert ies. We find that post deposition annealing can significantly improve the tunability of heteroepitaxial films. The magnitude and tunability of the dielectric constant will be correlated with film crystalline qu ality and microstructure.