NONLINEAR PROPERTIES OF SRTIO3 FILMS AT MICROWAVE-FREQUENCIES

Third order intermodulation distortion (IMD) measurements were perform ed on SrTiO3 thin film capacitors at frequencies of 1.7-1.9 GHz. The o utput power of the third order IMD product was 30 dB below that of the output fundamental signal when the level of the input signals were 0 dBm. Upon increasing the input signal levels to +22 dBm, the differenc e between the output fundamental and third order IMD signals dropped t o 20 dB. Applying a DC bias to the varactors decreased the level of th e third order IMD substantially; with a 100 volt bias, the third order IMD product was 31 dB lower than the output level of the fundamental signal.