INFLUENCE OF THE PROCESSING PARAMETERS ON THE PIEZOELECTRIC PROPERTIES OF SPUTTERED LEAD-BASED FERROELECTRIC THIN-FILMS

Lead-based ferroelectric thin films, PT and PZT, have been deposited o n platinized silicon substrates by using rf magnetron sputtering techn ique. Whatever the deposition network, the piezoelectric character has been demonstrated for all films. The piezoelectric response dependenc e of the poling treatment with the time and the applied de electric fi eld has been studied. The in-situ deposited films, without previous po ling, present piezoelectric activity e(31PT) = -0.49 C/m(2). The post- annealed films have a slight piezoelectric activity without poling tre atment and maximum values of the piezoelectric coefficients have been obtained, e(31PT) = 0.41 C/m(2) and e(31PZT) = 3.84 C/m(2) with de ele ctric field of 100 and 150 kV/cm respectively. The piezoelectric respo nses are directly related to the structure of the films, they are disc ussed in terms of domain orientation during the films formation and du ring the poling treatment.