DEVELOPMENT OF A NEW ANNEALING PROCESS TO ALLOW NEW TOP ELECTRODE MATERIALS FOR SRBI2TA2O9 CAPACITORS

Authors
WATANABE K TANAKA M NAGEL N KATORI K SUGIYAMA M YAMOTO H YAGI H
Citation
K. Watanabe et al., DEVELOPMENT OF A NEW ANNEALING PROCESS TO ALLOW NEW TOP ELECTRODE MATERIALS FOR SRBI2TA2O9 CAPACITORS, Integrated ferroelectrics, 17(1-4), 1997, pp. 451-460
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
17
Issue
1-4
Year of publication
1997
Pages
451 - 460
Database
ISI
SICI code
1058-4587(1997)17:1-4<451:DOANAP>2.0.ZU;2-I
Abstract
Using the Rapid Thermal Annealing (RTA) process, a technique has been established to obtain SrBi2Ta2O9 (SBT) films which showed well-shaped hysteresis curves without a postannealing process after top electrode deposition, maintaining high remanent polarization (Pr) values, RTA co nditions were optimized for nucleation of SBT. The effect of a seed la yer on the film properties became obvious. This process allowed top el ectrode materials other than Pt. High remanent polarization (Pr) value s could be also obtained with Pd top electrodes.