DEFECT FORMATION IN THE SURFACE-LAYER OF ELECTRON-IRRADIATED AND ION-IRRADIATED HG1-XCDXTE CRYSTALS

Authors
VIRT IS DUTSYAK IS
Citation
Is. Virt et Is. Dutsyak, DEFECT FORMATION IN THE SURFACE-LAYER OF ELECTRON-IRRADIATED AND ION-IRRADIATED HG1-XCDXTE CRYSTALS, Inorganic materials, 33(11), 1997, pp. 1134-1137
Citations number
11
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
33
Issue
11
Year of publication
1997
Pages
1134 - 1137
Database
ISI
SICI code
0020-1685(1997)33:11<1134:DFITSO>2.0.ZU;2-2
Abstract
Defect formation during electron and ion irradiations of Hg1-xCdxTe cr ystals was characterized by galvanomagnetic and photoelectric measurem ents. Irradiation with low-energy electrons gives rise to impurity red istribution in the surface layer. B+ ion implantation leads to the for mation of acceptor centers, presumably mercury vacancies, with ionizat ion energies E-a1 similar or equal to 18 meV and E-a2 similar or equal to 25 meV. A change in the mechanism of nonequilibrium-carrier recomb ination may occur some distance from the top surface.