FORMATION OF ALN FILMS BY AL EVAPORATION WITH NITROGEN ION-BEAM BOMBARDMENT

Authors
HE XJ YANG SZ TAO K FAN YD
Citation
Xj. He et al., FORMATION OF ALN FILMS BY AL EVAPORATION WITH NITROGEN ION-BEAM BOMBARDMENT, Materials chemistry and physics, 51(2), 1997, pp. 199-201
Citations number
10
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
51
Issue
2
Year of publication
1997
Pages
199 - 201
Database
ISI
SICI code
0254-0584(1997)51:2<199:FOAFBA>2.0.ZU;2-9
Abstract
Aluminum nitride films were synthesized by electron gun evaporation of aluminum on to Si(111) wafer with simultaneous bombardment by nitroge n ions. Under special conditions, polycrystalline AlN films of fine cr ystallinity were obtained. (C) 1997 Elsevier Science S.A.