FABRICATION OF EXCESS PBO-DOPED PB(ZR0.52TI0.48)O-3 THIN-FILMS USING RADIO-FREQUENCY MAGNETRON SPUTTERING METHOD

As a method for lowering deposition temperature, the effect of 50% exc ess Pb addition in Pb(Zr0.52T0.48)O-3 ceramic target on Pb(Zr0.52T0.48 )O-3 thin films (4000-5000 Angstrom thickness) was studied. The PZT th in films were grown on Pt/Ti/SiO2/Si(100) substrates by using radio fr equency magnetron sputtering method. The existing phase of PZT thin fi lms was confirmed with x-ray diffraction analysis, and growth morpholo gies were studied with scanning electron microscopy. At the substrate temperature of 440 degrees C, only the pyrochlore phase existed, and a s the substrate temperature was increased, the amount of perovskite ph ase also increased. It was finally found that the PZT thin films witho ut pyrochlore phase could be fabricated at the temperature as low as 5 20 degrees C. It was also observed that the quality of the final phase s after the postannealing process severely depends on the initial pero vskite phase purity during deposition. The electrical properties of PZ T thin films were characterized through P-E hysteresis curves, dielect ric constant and loss, and fatigue measurements. It was confirmed that the electrical properties of PZT thin films were closely related to t he crystallographic microstructure of PZT thin films. (C) 1997 America n Vacuum Society. [S0734-2101(97)03506-9].