GE GROWTH ON SI(001) STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY PEAKSHAPE-ANALYSIS AND ATOMIC-FORCE MICROSCOPY

We investigated the nanostructure of Ge deposited on Si(001) at T=560 degrees C with x-ray photoelectron spectroscopy using peak shape analy sis and with atomic force microscopy. Analyzing the Ge 2p as well as t he Si KLL spectra, we find strong island growth. The Ge deposited is e qual to a 14-monolayer-thick film. In agreement with the x-ray photoel ectron spectroscopy results, the atomic force microscope pictures show strong island formation. About 50% of the Si surface is covered by Ge islands. The islands are distributed regularly and have an average he ight of 50 Angstrom. We find some variation in height ranging from sim ilar or equal to 20 to similar or equal to 80 Angstrom. (C) 1997 Ameri can Vacuum Society. [S0734-2101(97)00806-3].