LOW-TEMPERATURE DEPOSITION OF EPITAXIAL TITANIUM CARBIDE ON MGO(001) BY COEVAPORATION OF C-60 AND TI

Authors
NORIN L MCGINNIS S JANSSON U CARLSSON JO
Citation
L. Norin et al., LOW-TEMPERATURE DEPOSITION OF EPITAXIAL TITANIUM CARBIDE ON MGO(001) BY COEVAPORATION OF C-60 AND TI, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 3082-3085
Citations number
15
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
15
Issue
6
Year of publication
1997
Pages
3082 - 3085
Database
ISI
SICI code
0734-2101(1997)15:6<3082:LDOETC>2.0.ZU;2-P
Abstract
Films of epitaxial titanium carbide were grown on MgO(001) at 400 and 500 degrees C using a novel method based on the co-evaporation of Ti a nd C-60. Mirrorlike, adhesive films of TiC1-x (0.2<x<0.4) were deposit ed at growth rates of approximately 0.1 mu m/h. X-ray diffraction show ed that the crystal orientation relationship between the film and the substrate was TiC(001)//MgO(001) and TiC[100]//MgO[100]. Transmission electron microscopy and low energy electron diffraction were also used to verify the epitaxial growth of the films. (C) 1997 American Vacuum Society. [S0734-2101(97)03606-3].