SURFACE KINETIC-STUDY OF ION-INDUCED CHEMICAL-VAPOR-DEPOSITION OF COPPER FOR FOCUSED ION-BEAM APPLICATIONS

Citation
Tp. Chiang et al., SURFACE KINETIC-STUDY OF ION-INDUCED CHEMICAL-VAPOR-DEPOSITION OF COPPER FOR FOCUSED ION-BEAM APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 3104-3114
Citations number
29
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
07342101
Volume
15
Issue
6
Year of publication
1997
Pages
3104 - 3114
Database
ISI
SICI code
0734-2101(1997)15:6<3104:SKOICO>2.0.ZU;2-O
Abstract
A systematic surface kinetic study of ion-induced chemical vapor depos ition (II-CVD) of Cu from Cu(I) hexafluoroacetylacetonate vinyltrimeth ylsilane was performed using quartz crystal microbalance mass depositi on rate measurements, x-ray photoelectron spectroscopy compositional a nalysis, and laser-induced thermal desorption coverage measurements in a multibeam scattering apparatus. With the above, a phenomenological surface kinetic model describing the adsorption, deposition (both of t he desired source metal and of unwanted impurities), byproduct desorpt ion, and sputtering processes involved in II-CVD was formulated. The s urface kinetic modal predicts the deposition rate, composition, and pr ecursor coverage dependencies in agreement with experimental results. (C) 1997 American Vacuum Society. [S0734-2101(97)04506-5].