KINETICS OF F ATOMS AND FLUOROCARBON RADICALS STUDIED BY THRESHOLD IONIZATION MASS-SPECTROMETRY IN A MICROWAVE CF4 PLASMA

The absolute concentration of fluorine atoms (F), a parameter of great importance for the characterization and modeling of etching plasmas, was measured by means of threshold ionization mass spectrometry in a C F4 microwave plasma (p = 15-100 mTorr). The kinetics of these atoms an d those of CF2 and CF3 radicals were studied by pulsing the plasma and time-resolved detection of these radicals with mass spectrometer. Sti cking coefficients of F atoms on the different surrounding surfaces we re estimated, as a function of the discharge parameters and the nature of the surfaces interacting with the plasma. It was found that the st icking of F atoms on hexatriacontane polymer surface is highly activat ed by the plasma generated ions and/or ultraviolet radiations. (C) 199 7 American Vacuum Society. [S0734-2101(97)03406-4].