Im. Lee et Cg. Takoudis, ANALYSIS AND CHARACTERIZATION OF NATIVE-OXIDE GROWTH ON EPITAXIAL SI1-XGEX FILMS AFTER A CHEMICAL CLEAN, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 3154-3157
Citations number
11
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Ellipsometry, contact angle goniometry, atomic force microscopy (AFM),
and x-ray photoelectron spectroscopy (XPS) are used to study native o
xide growth on SiGe films (with Ge content of 0%, 20%, 40%, and 100%)
after a chemical clean. Ellipsometry suggests that the presence of Ce
affects the initial oxide thickness right after the clean but it does
not affect the rate of native oxide growth, Roughness of SiGe samples
as measured by AFM does not appear to be affected by the native oxide
growth or the Ge content in the film. The decrease in advancing (and r
eceding) contact angles of SiGe samples after the chemical clean is ap
parently the result of both increasing oxide thickness and oxide solid
phase composition. XPS results suggest that increasing Ge content in
the film increases the oxidation of SiGe surface atoms. The chemical s
hifts in the Si 2p and Ge 3d spectra suggest that both Si and Ge react
with oxygen to form SiO2 and GeO2. Such data suggests that contact an
gle measurements could be a rapid method to determine the state and pa
ssivation characteristics of a silicon substrate surface as a function
of time, however. such a technique would not be as effective for SiGe
films, the chemical composition of their native oxides of which would
also change as a function of time. (C) 1997 American Vacuum Society.
[S0734-2101(97)02406-8].