MATERIALS AND PRODUCTION CHARACTERIZATION REQUIREMENTS FOR THE PRODUCTION OF FRAM(R) MEMORY PRODUCTS

Successful production of FRAM(R) ferroelectric memories requires the c ontrol of a number of different physical, chemical, and electrical pro perties to assure that the end product meets the targeted product perf ormance. The reliability and quality issues are of the paramount impor tance when introducing a new technology. The evaluation of product at all stages of production is required to assure that the films that are deposited perform to the required standards. Incoming issues of targe t performance and quality are discussed. Measurements of as deposited films are evaluated using ICP (inductively coupled plasma atomic emiss ion spectrometry), as well as orientation via x-ray diffraction. Studi es have been performed to show the impact of in line ferroelectric met rics measured on capacitors such as thickness of films, switched charg e as a function of voltage, retention and fatigue at 5 volts on part p erformance. Standard retention tests have been developed to evaluate t he retention/imprint and retention/imprint after fatigue of all FRAM(R ) products. The performance of finished products are correlated to in line as well as fundamental measures of ferroelectric thin films.