Ch. Choi et al., ASYMMETRIC SWITCHING AND IMPRINT IN (LA,SR)COO3 PB(ZR,TI)O-3/(LA,SR)COO3 HETEROSTRUCTURES/, Integrated ferroelectrics, 18(1-4), 1997, pp. 39-48
(La,Sr)CoO3/Pb(Zr,Ti)O-3/(La,Sr)CoO3 (LSCO) heterostructures have been
grown on LaAlO3 substrates by pulsed laser deposition (PLD) to invest
igate asymmetric polarization switching of Pb(Zr,Ti)O-3 (PZT) thin fil
ms with different electrode configuration. P-V hysteresis loop of LSCO
/PZT/LSCO was symmetric. However, LaCoO3 (LCO)/PZT/LSCO showed a large
ly asymmetric P-V hysteresis loop and large relaxation of the remanent
polarization at the negatively poled state, which means that the nega
tively poled state was unstable. On the other hand, LSCO/PZT/LCO exhib
ited large relaxation of the positively poled state. The asymmetric be
havior of the polarized states implies the presence of an internal ele
ctric field inside the PZT layer. It is suggested that the internal el
ectric field caused by built-in voltages at LCO/PZT and LSCO/PZT inter
faces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0
.6 eV and 2.1 eV, respectively.