A STUDY OF THE DEFECT STRUCTURES IN MOCVD-GROWN PBZRXTI1-XO3 THIN-FILMS BY THERMALLY STIMULATED CURRENT MEASUREMENTS

Authors
OKINO H SHIMIZU M HORIUCHI T SHIOSAKI T MATSUSHIGE K
Citation
H. Okino et al., A STUDY OF THE DEFECT STRUCTURES IN MOCVD-GROWN PBZRXTI1-XO3 THIN-FILMS BY THERMALLY STIMULATED CURRENT MEASUREMENTS, Integrated ferroelectrics, 18(1-4), 1997, pp. 63-70
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
18
Issue
1-4
Year of publication
1997
Pages
63 - 70
Database
ISI
SICI code
1058-4587(1997)18:1-4<63:ASOTDS>2.0.ZU;2-P
Abstract
Thermally Stimulated Current (TSC) measurements were carried out for M OCVD-grown PZT thin films in order to investigate the correlation betw een defects and polarization fatigue. Two types of peaks were observed in TSC signals; one originated from depolarization of space charge di poles, and the other from trapped electronic charge carriers. In the l atter TSC peaks, it was found that the density of the trap centers inc reases with polarization cycles, indicating that the defects in the PZ T films deeply relate to fatigue process.