EFFECT OF ANNEALING CONDITIONS ON THE MICROSTRUCTURE OF RUO2 THIN-FILMS DEPOSITED BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Ruthenium dioxide thin films were deposited on SiO2/Si substrate at lo w temperatures by hot-wall metalorganic chemical vapor deposition usin g the ruthenocene and oxygen gas mixtures. The RuO2 films annealed at 700 degrees C in 1 atm. oxygen ambient showed a dense and improved mic rostructure. However, above 750 degrees C evaporation of RuO2 was obse rved at the interface between RuO2 and SiO2/Si substrates as well as t he surface of RuO2 films. RuO2 annealed at vacuum ambient(about 1.0 x 10(-5) torr) of 500 degrees C were partially reduced to Ru and complet ely Ru at 700 degrees C. Films annealed at vacuum ambient showed the m ost low resistivity because RuO2 was reduced to the Ru metal with incr easing annealing temperatures. Films annealed in oxygen atmosphere of 600 degrees C after vacuum annealing showed an uniform RuOx grain size but a little porous structure.