Y. Kojima et al., MEASUREMENTS OF VAPOR-PRESSURES OF MOCVD MATERIALS, WHICH ARE USABLE FOR FERROELECTRIC THIN-FILMS, Integrated ferroelectrics, 18(1-4), 1997, pp. 183-195
Measurements of vapor pressures for various chemicals, which might be
used for MOCVD technique to form ferroelectrics on silicon devices, ha
ve been carried out under low pressure ambients with argon gas as carr
ier, so that the measuring conditions resembled the actual cases. Some
of the chemicals have been synthesized and refined under high vacuum
conditions to guarantee their organic purity. As an example of our MOC
VD, use of bismuth tertiary butoxide and strontium bis(hexaisopropoxyt
antalum) to form SBT (strontium bismuth tantalate) thin film on a sili
con wafer has been introduced.