Rc. Zhang et R. Xu, AUTOSTOICHIOMETRIC VAPOR-DEPOSITION OF FERROELECTRICS - THE STOICHIOMETRY OF CO-EVAPORATIONS, Integrated ferroelectrics, 18(1-4), 1997, pp. 197-211
The stoichiometry control in MOCVD of multicomponent oxide ferroelectr
ics is studied by a comprehensive approach. Experimental results on th
e stoichiometry of chemically controlled co-evaporation are reported.
The temperature dependence of the vapor pressures for single alkoxides
Ta(O CnH2n+1)(5) and Nb(O CnH2n+1)(5) are compared with those of doub
le alkoxides LiTa(O CnH2n+1)(6) and LiNb(OCnH2n+1)(6). The stoichiomet
ry of evaporation processes for the double alkoxides under various con
ditions is studied by controlled sublimation along with the compositio
n analysis of both the sublimate and the residue. It is found that the
stoichiometry of co-evaporation depends on the relative partial press
ure of the single alkoxides at the respective evaporation temperature.