AUTOSTOICHIOMETRIC VAPOR-DEPOSITION OF FERROELECTRICS - THE STOICHIOMETRY OF CO-EVAPORATIONS

Authors
Citation
Rc. Zhang et R. Xu, AUTOSTOICHIOMETRIC VAPOR-DEPOSITION OF FERROELECTRICS - THE STOICHIOMETRY OF CO-EVAPORATIONS, Integrated ferroelectrics, 18(1-4), 1997, pp. 197-211
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
18
Issue
1-4
Year of publication
1997
Pages
197 - 211
Database
ISI
SICI code
1058-4587(1997)18:1-4<197:AVOF-T>2.0.ZU;2-U
Abstract
The stoichiometry control in MOCVD of multicomponent oxide ferroelectr ics is studied by a comprehensive approach. Experimental results on th e stoichiometry of chemically controlled co-evaporation are reported. The temperature dependence of the vapor pressures for single alkoxides Ta(O CnH2n+1)(5) and Nb(O CnH2n+1)(5) are compared with those of doub le alkoxides LiTa(O CnH2n+1)(6) and LiNb(OCnH2n+1)(6). The stoichiomet ry of evaporation processes for the double alkoxides under various con ditions is studied by controlled sublimation along with the compositio n analysis of both the sublimate and the residue. It is found that the stoichiometry of co-evaporation depends on the relative partial press ure of the single alkoxides at the respective evaporation temperature.