CHARACTERIZATION OF SELF-PATTERNED SBT SBNT THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS/

Citation
H. Uchida et al., CHARACTERIZATION OF SELF-PATTERNED SBT SBNT THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS/, Integrated ferroelectrics, 18(1-4), 1997, pp. 249-261
Citations number
16
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
18
Issue
1-4
Year of publication
1997
Pages
249 - 261
Database
ISI
SICI code
1058-4587(1997)18:1-4<249:COSSST>2.0.ZU;2-Q
Abstract
Performance of the self-patterned SBT/SBNT films from photosensitive s olutions were optimized by adjusting the film composition and the proc ess. Polarization values of the self-patterned SBT/SBNT films were opt imized by decreasing the Sr/Ta ratio of the SBT composition from 0.5 t o 0.35-0.45 and adjusting Nb/(Nb+Ta) ratio of SBNT composition between 0.2 and 0.3. Deep UV irradiation during the self-patterning process i ncreases the polarization and coercive field values of the SBT/SBNT fi lms by promoting him densification and grain growth. Both electroding/ deposition sequences (Top-down or Bottom-up) by self-patterning method were demonstrated. High endurance of SBT/SBNT has been kept even usin g self-patterning. Performance of the various capacitors including mic ro capacitor down to 2x2 mu m(2) by self-patterning method was also ev aluated.