Ar. Krauss et al., STUDIES OF FERROELECTRIC FILM GROWTH-PROCESSES USING IN-SITU, REAL-TIME ION-BEAM ANALYSIS, Integrated ferroelectrics, 18(1-4), 1997, pp. 351-368
Further technological advances in ferroelectric thin film-based device
s requires to achieve a better understanding of the growth of ferroele
ctric and electrode layers, including oxygen incorporation during grow
th and other parameters. This can be achieved using in situ, real-time
characterization techniques. We are currently using time-of-flight io
n scattering and recoil spectroscopy (TOF-ISARS) to study film growth
processes. Results discussed in this review concerns initial studies o
f the growth of SrBi2Ta2O9 (SBT) films. As an example, the potential o
f TOF-ISARS has been demonstrated by determining that the layered SBT
films are terminated in an incomplete (Bi2O2)(2+) layer with an oxygen
plane as the top most layer. This results and the implications for un
derstanding the resistant to fatigue of Pt/SBT/Pt capacitors are discu
ssed in this review.