ELECTRICAL-PROPERTIES OF SRBI2TA2O9 THIN-FILMS DEPOSITED BY RF MAGNETRON SPUTTERING

Authors
YANG CH PARK SS YOON SG
Citation
Ch. Yang et al., ELECTRICAL-PROPERTIES OF SRBI2TA2O9 THIN-FILMS DEPOSITED BY RF MAGNETRON SPUTTERING, Integrated ferroelectrics, 18(1-4), 1997, pp. 377-387
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
18
Issue
1-4
Year of publication
1997
Pages
377 - 387
Database
ISI
SICI code
1058-4587(1997)18:1-4<377:EOSTDB>2.0.ZU;2-8
Abstract
Ferroelectric bismuth layer oxide SrBi2Ta2O9(SBT) thin films were depo sited on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at 500 de grees C and then, were annealed at 850 degrees C for 1 hr in oxygen am bient. The remanent polarization(2P(r)) and the coercive field(2E(c)) of a 300nm thick SBT film deposited in 10mtorr were 18.5 mu C/cm(2) an d 150kV/cm at an applied voltage of 5V, respectively. The SET films sh owed a fatigue-free characteristics up to 10(10) cycles under 5V bipol ar pulse. The leakage current density of the SET films were about 8.6 x 10(-8) A/cm(2) at 100kV/cm.