Cw. Hill et al., A COMPARISON OF THE REACTIONS OF PHOSPHORUS PRECURSORS ON DEPOSITED GAP AND INP FILMS, Journal of crystal growth, 181(4), 1997, pp. 321-325
The reactions of the phosphorus precursors tertiarybutylphosphine (TBP
), tris(dimethylamino)phosphorus (TDMAP), and tertiarybutylbis(dimethy
lamino) phosphine (TBBDMAP) on deposited GaP and InP films have been c
ompared in low-pressure conditions. The rates of decomposition are gen
erally greater on GaP than on InP and correlate well with the reported
growth results for chemical beam epitaxy (CBE). Those phosphorus prec
ursors that can be used for epitaxial growth without precracking have
the highest heterogeneous reaction rates. The differences in apparent
activation energies suggest that these compounds adsorb more strongly
on GaP than on InP surfaces.