DETERMINATION OF DEFECT TYPES OF ZNSE-BASED EPILAYERS BY ETCH-PIT CONFIGURATIONS

Determination of defect types by etch-pit configurations was studied. A NaOH (30 mol%) etchant was found useful for etch-pit development on ZnSe-based epilayers grown on (0 0 1) GaAs. After etch-pit formation o n the surface, Transmission Electron Microscopy (TEM) experiments were conducted. The etch-pits have been formed in three different configur ations; regularly paired etch-pits in the horizontal direction, regula rly paired etch-pits in the vertical direction and an array of single etch-pits in the [1 1 0] and [1 0 0] directions which result from Fran k-type stacking faults, Shockley-type stacking faults and threading di slocation segments, respectively.