MEASUREMENT OF PROTON RADIATION-DAMAGE TO SI AVALANCHE PHOTODIODES

Authors
SUN XL REUSSER D DAUTET H ABSHIRE JB
Citation
Xl. Sun et al., MEASUREMENT OF PROTON RADIATION-DAMAGE TO SI AVALANCHE PHOTODIODES, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2160-2166
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
12
Year of publication
1997
Pages
2160 - 2166
Database
ISI
SICI code
0018-9383(1997)44:12<2160:MOPRTS>2.0.ZU;2-6
Abstract
The effects of proton radiation damage on EG&G C30902S Si avalanche ph otodiodes (APD's) were measured, The APD bulk leakage current increase d at 0.29 fA/rad, or about 1800 dark photoelectrons per rad(Si) at -10 degrees C under 16.2 MeV protons. There were little changes in the br eakdown voltage, with the radiation doses up to 30 krad(Si). The incre ase in the total dark currents below the breakdown voltage was insigni ficant until 3 krad(Si).