THE EFFECT OF BODY CONTACT SERIES RESISTANCE ON SOI CMOS AMPLIFIER STAGES

Citation
Cf. Edwards et al., THE EFFECT OF BODY CONTACT SERIES RESISTANCE ON SOI CMOS AMPLIFIER STAGES, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2290-2294
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
44
Issue
12
Year of publication
1997
Pages
2290 - 2294
Database
ISI
SICI code
0018-9383(1997)44:12<2290:TEOBCS>2.0.ZU;2-B
Abstract
This paper examines some implications for analogue design of using bod y ties as a solution to the problem of floating body effects in partia lly-depleted (PD) SOI technologies. Measurements on II-gate body-tied structures in a 0.7-mu m SOI process indicate body-tie series resistan ces increasing into the M Omega region, Both circuit simulation and me asurement results reveal a delayed but sharper kink effect as this res istance increases. The consequences of this effect are shown in the co ntext of a simple amplifier configuration, resulting in severe bias-de pendent degradation in the small signal gain characteristics as the bo dy-tie resistance enters the M Omega region. It is deduced that imperf ectly body tied devices may be worse for analogue design than using no body tie at all.