DEGRADATION OF TUNNEL-THIN SILICON DIOXIDE FILMS

Authors
GREKHOV IV SHULEKIN AF VEXLER MI
Citation
Iv. Grekhov et al., DEGRADATION OF TUNNEL-THIN SILICON DIOXIDE FILMS, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2307-2308
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
12
Year of publication
1997
Pages
2307 - 2308
Database
ISI
SICI code
0018-9383(1997)44:12<2307:DOTSDF>2.0.ZU;2-Z
Abstract
The transition of a charge transport mechanism in ultrathin (2-3 nm) S iO2 films from Fowler-Nordheim injection to direct tunneling was found to result in the enhancement of a charge-to-degradation from similar to 10(3) to similar to 10(7) C/cm(2). Tunnel MOS structures were exami ned at high current density (200-1000 A/cm(2)).