CLOSE CORRESPONDENCE BETWEEN FORWARD GATED-DIODE AND CHARGE-PUMPING CURRENTS OBSERVED IN HOT-CARRIER STRESSED PMOSFETS

Authors
LING CH GOH YH
Citation
Ch. Ling et Yh. Goh, CLOSE CORRESPONDENCE BETWEEN FORWARD GATED-DIODE AND CHARGE-PUMPING CURRENTS OBSERVED IN HOT-CARRIER STRESSED PMOSFETS, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2309-2311
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
12
Year of publication
1997
Pages
2309 - 2311
Database
ISI
SICI code
0018-9383(1997)44:12<2309:CCBFGA>2.0.ZU;2-S
Abstract
A linear relation exists between the maximum forward gated-diode curre nt I-d and the corresponding maximum charge pumping current I-cp, in a hot-carrier stressed pMOSFET. I-d peak is further observed to shift b y an amount equal to the shift in the rising edge of I-cp. A close cor respondence between the two currents is demonstrated.