EFFECTS OF PROCESSING ON ELECTRICAL-PROPERTIES OF YBA2CU3O7 FILMS .2.IN-SITU DEPOSITION PROCESSES

The effects of several patterning process steps on the critical curren t J(c) and surface resistance R(s) of YBa2Cu3O7 films are described. I ncluded are two off-axis sputtering processes and a metalorganic chemi cal-vapor deposition (MOCVD) process, all producing in situ supercondu cting films with c-axis epitaxial orientation. J(c) and R(s) parameter s were measured by mutual inductance and parallel plate resonator tech niques, respectively, so that the films did not require patterning for the measurement. Applying a polymer film and stripping, either with a cetone or with an O2 plasma, resulted in no change in R(s). Brief ion milling, as well as baking at 185-degrees-C with polymer film present, caused moderate degradation (approximately 25 muOMEGA) for films depo sited on MgO (both sputtered and MOCVD). The damage caused by ion mill ing sputtered films on LaAlO3 was considerably greater (approximately 100 muOMEGA); photoresist developer also had a significant effect. The degree of degradation in R(s) for these films suggests that the surfa ce damage results in secondary effects that penetrate well into the fi lm. This damage was not removed by annealing in 02; in fact it was mad e substantially worse. J(c) was increased slightly by all processes, b y an amount ranging from 5% to 50%.