IMPROVED QUANTIFICATION IN SECONDARY-ION MASS-SPECTROMETRY DETECTING MCS-IONS( MOLECULAR)

Molecular secondary ions composed of a sample atom M and a resputtered Cs+ projectile (MCs+) are successfully used for the quantification of secondary-ion mass spectrometry (SIMS) data. For a variety of differe nt specimens it is demonstrated that the yields of these rather ubiqui tous species exhibit little or no dependence on sample composition (ma trix effect) even in the presence of electronegative elements and are thus well suited for quantitative SIMS evaluation. Specifically, for s eries of binary and ternary systems (a-Si:H, a-SiGe:H, a-SiC:H, and HC N) composition independent relative sensitivity factors could be estab lished; thus, quantification by means of a single standard is feasible . Furthermore, from the correlation of the measured MCs+ secondary ion intensities relative sensitivity factors (and hence concentrations) c an directly be derived, i.e., without any standard. The applicability of this quantification scheme is exemplified for a AlGaAs/GaAs multila yer structure and for the Ga focused ion beam implantation in InP. The results indicate that utilizing MCs+ molecular ions an accurate quant ification of major components by SIMS is possible.