STRUCTURE AND PROPERTIES OF TITANIUM NITRIDE THIN-FILMS DEPOSITED AT LOW-TEMPERATURES USING DIRECT-CURRENT MAGNETRON SPUTTERING

Titanium nitride layers on silicon substrates have been deposited by m agnetron sputtering at a constant temperature of 200-degrees-C using n itrogen partial pressures (p(N2)) from 0.001 to 0.36 Pa. Distinct depe ndences between p(N2) in the reactive gas and the mechanical and struc tural properties of the layers could be found by x-ray diffraction and other methods. The general absence of the Ti2N phase in layers deposi ted at low temperatures can be explained by the high energy impact of energetic particles during the deposition process as well as by the li mited mobility of adatoms due to the low substrate temperature. Two di fferent cases of lattice distortions were detected for low and high p( N2), respectively. In the higher pressure range the lattice parameters a0(111) are greater than the a0(200). For this the variable density o f interstitial sites in different planes together with the macroscopic film stress was found to be responsible. At lower p(N2) the a0(111) w as smaller than the a0(200). ThiS effect could be explained by the pre sence of a high number of vacancies in the lattice influencing the che mical bonding and thus leading to an anisotropy of the stability of th e interplanar spacings. From that macroscopic stresses results in an a nisotropic deformation of the film crystallites. Both explanations cou ld be supported by annealing experiments.