CO2-LASER CHEMICAL-VAPOR-DEPOSITION OF SILICA FILMS IN A PARALLEL CONFIGURATION - A STUDY OF GAS-PHASE PHENOMENA

Low-temperature silicon oxide films were successfully grown using SiH4 -N2O mixtures by a continuous wave-CO2 laser tuned at 10.6 mum in a pa rallel configuration. The reaction was initiated by high gas temperatu res obtained as a result of multiple successive absorption of photons by silane molecules, followed by energy redistribution through intermo lecular collisions. The study of film growth rate and properties as in fluenced by both total gas pressure and substrate temperature for a ga s mole ratio psi=P(N2O)/P(SiH4)=30 demonstrated that peak gas temperat ure controls the deposition rate, revealing that the process is driven by gas phase reactions. For the process, apparent activation energy w as determined to be 45 kcal/mol, and apparent overall order of the rea ction m=-1.5. The gas temperature distribution was calculated by means of a steady-state energy balance in the gas volume, explaining very w ell the experimental growth rates and the properties of the obtained f ilms.