PROPERTIES OF TITANIUM LAYERS DEPOSITED BY COLLIMATION SPUTTERING

Authors
HARA T NOMURA T MOSLEY RC SUZUKI H SONE K
Citation
T. Hara et al., PROPERTIES OF TITANIUM LAYERS DEPOSITED BY COLLIMATION SPUTTERING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 506-508
Citations number
5
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
12
Issue
2
Year of publication
1994
Pages
506 - 508
Database
ISI
SICI code
0734-2101(1994)12:2<506:POTLDB>2.0.ZU;2-F
Abstract
Thin Ti films are deposited by collimation sputtering. Resistivity is around 80 muOMEGA cm in the as-deposited collimation film. This value does not decrease with the increase of sputtering power and of deposit ion rate, and is higher than that of 60-65 muOMEGA cm in film by conve ntional sputtering. Strongly (002) oriented Ti film is deposited in co nventional sputtering. However, weak (002) and (101) peaks appear in f ilms by collimation sputtering. X-ray intensity ratio, I(002)/[I(002)I(101)], indicating the grain growth of preferential Ti(002), does not increase to 0.93 attained in the conventional sputtering with increas ing power.