A. Noya et al., TRANSMISSION ELECTRON-MICROSCOPY OF THE SEQUENCE OF PHASE-FORMATION IN THE INTERFACIAL SOLID-PHASE REACTIONS IN TA SI SYSTEMS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 253-257
Citations number
23
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
The interfacial reaction of Ta thin films on (100) Si was, investigate
d by high-resolution transmission electron microscopy. An amorphous la
yer was observed at the as-deposited Ta/Si interface. A phase of Ta5Si
3 was first found to form at the interface between a Ta overlayer and
the amorphous layer after annealing at 560 degrees C for 1 h. Annealin
g at 630 degrees C for 1 h led to the formation of another interlayer
due to the outdiffusion of Si between the amorphous layer and Si. The
phase in this interlayer transformed from a metastable one to TaSi2 du
e to annealing at 680 degrees C for 1 h. The first nucleation of Ta5Si
3 at the interface between Ta and the amorphous layer implies that the
initially formed amorphous layer has a metal-rich composition close t
o Ta5Si3. The formation of the interlayer between the amorphous layer
and Si prior to the nucleation of TaSi2 was considered as a result of
a kinetic constraint to favor the nucleation of TaSi2. (C) 1997 Americ
an Vacuum Society.