EFFECT OF ION-BOMBARDMENT IN VERY-HIGH FREQUENCY GLOW-DISCHARGE ON GROWTH AND PROPERTIES OF SIHX FILMS

Authors
KOSAREV AI SMIMOV AS ABRAMOV AS VINOGRADOV AJ USTAVSCHIKOV AY SHUTOV MV
Citation
Ai. Kosarev et al., EFFECT OF ION-BOMBARDMENT IN VERY-HIGH FREQUENCY GLOW-DISCHARGE ON GROWTH AND PROPERTIES OF SIHX FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 298-306
Citations number
13
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
15
Issue
2
Year of publication
1997
Pages
298 - 306
Database
ISI
SICI code
0734-2101(1997)15:2<298:EOIIVF>2.0.ZU;2-F
Abstract
Ion and electron flow characteristics have been studied in different r egimes both in rf (13.56 MHz) and VHF (58 MHz) glow discharges in sila ne. The measurements were conducted in a growth reactor and the data o btained was used for SiHx films deposition. Electronic properties of t he films prepared under a variety of ion bombardment in rf, VHF discha rges have been investigated. Correlation of these properties with ion parameters in rf, VHF discharges is discussed. (C) 1997 American Vacuu m Society.