LOW CONTACT RESISTANCE METALLIZATION FOR GIGABIT SCALE DRAMS USING FULLY-DRY CLEANING BY AR H-2 ECR PLASMA/

Authors
TAGUWA T URABE K SEKINE M YAMADA Y KIKKAWA T
Citation
T. Taguwa et al., LOW CONTACT RESISTANCE METALLIZATION FOR GIGABIT SCALE DRAMS USING FULLY-DRY CLEANING BY AR H-2 ECR PLASMA/, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 588-594
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
4
Year of publication
1997
Pages
588 - 594
Database
ISI
SICI code
0018-9383(1997)44:4<588:LCRMFG>2.0.ZU;2-P
Abstract
A fully-dry cleaning technique with Ar/H-2 Electron Cyclotron Resonanc e (ECR) plasma was developed as a low contact resistance metallization technology for Gigabit scale DRAM contacts, By combining with ECR TiN /-Ti-CVD, extremely low contact resistances of 296 Omega and 350 Omega for 0.3-mu m contact diameter with aspect ratio of 7 were realized on n(+) and p(+) diffusion layers, respectively, No leakage current was observed, By using this technology, a DRAM ULSI, which was planarized by Chemical Mechanical polishing (CMP) and had deep contact holes with aspect ratio of 6, was successfully demonstrated.