POTENTIAL DESIGN AND TRANSPORT PROPERTY OF 0.1-MU-M MOSFET WITH ASYMMETRIC CHANNEL PROFILE

This paper describes potential design and transport property of a 0.1- mu m n-MOSFET with asymmetric channel profile, which is formed by the tilt-angle ion-implantation after gate electrode formation, The relati on between device performance and transport property of the asymmetric 0.1-mu m device is explored by Monte Carlo simulations and measured e lectrical characteristics. The self-consistent Monte Carlo device simu lation coupled with a process simulator reveals higher electron veloci ty at the source end of the channel and velocity overshoot at the sour ce side of the channel, and the smaller high-energy tail of the distri bution in the drain, This transport property creates high drain curren t, large transconductance, and low substrate current of the 0.1-mu m n -MOSFET with asymmetric channel profile.