HOT-CARRIER DEGRADATION OF P-MOSFETS UNDER ANALOG OPERATION

The hot-carrier degradation of p-MOSFET's is investigated from the vie wpoint of analog operation, We apply sensitive measurement methods to determine drain current, drain conductance, and transconductance in th e saturation regime besides the commonly investigated parameters in th e linear regime of operation, Those investigations are performed for d ifferent gate lengths in order to allow comparisons between the shorte st channels used for digital and the long channels usually used for an alog operation, It is found that the drain conductance important in ma ny analog applications, does not show a channel length dependence for gate lengths above 1.5 times the minimum gate length, The stress time dependencies are determined predominantly finding logarithmic behavior s, These findings are explained by a model which highlights the import ance of the lengths of the regions of damage and carrier velocity satu ration, Moreover, the dependencies of the different characterization p arameters on stress time, channel length and voltages of operation are evaluated. Finally, methods are given for extrapolation of degradatio n of analog parameters to operating conditions for reliability assuran ce.