HIGH-FIELD TRANSPORT OF INVERSION-LAYER ELECTRONS AND HOLES INCLUDINGVELOCITY OVERSHOOT

In this paper, we experimentally address the effect of a wide range of parameters on the high-held transport of inversion-layer electrons an d heres, The studied parameters include substrate doping level, surfac e micro-roughness, vertical field strength, nitridation of the gate ox ide, and device channel length. We employ special test structures buil t on Silicon-On-Insulator (SOI) and bulk wafers to accurately measure the high-held drift velocity of inversion-layer carriers, Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocities on nitridation of the gate oxide, dependence of the high-field drift velocity on the effective ve rtical held, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.