REASSESSMENT OF THE PIEZOELECTRIC CONSTANT IN GAAS BY STUDYING THE ELECTRON-TRANSPORT OF HIGH-PURITY MBE-GROWN GAAS

Acoustic phonon piezoelectric scattering is the most important scatter ing process in high purity (n congruent-to 10(13)) GaAs at low tempera tures. In this work, we have reassessed the value of the piezoelectric constant by fitting the calculated Hall mobility to the highest purit y MBE grown GaAs Hall mobility in the temperature range where this sca ttering is most important. Since all other variables are known, leavin g the piezoelectric constant as the only unknown parameter, we determi ned a value of about 1.77 x 10(7) V-cm-1 which is approximately 20% hi gher than the value usually found in the literature.