Mj. Zhou et A. Vancalster, A BREAKDOWN VOLTAGE MODEL FOR IMPLANTED RESURF P-LDMOS DEVICE ON N(+)BURIED LAYER, Solid-state electronics, 37(7), 1994, pp. 1383-1385
This paper presents an analytical expression of the breakdown voltage
of a high voltage implanted RESURF p-LDMOS device which uses the n+ bu
ried layer as an effective device substrate. In this model, the doping
profile of the buried layer is considered and discussed. The implant
dose for the drift region to implement the RESURF principle is also de
scribed by this model. Results calculated from this model are verified
by experimental values.