ARRAYS OF GATED FIELD-EMITTER CONES HAVING 0.32-MU-M TIP-TO-TIP SPACING

We have reduced the gate voltage required to achieve a given emission current density in field-emitter arrays by scaling down the gate-to-ti p and tip-to-tip spacing to the unprecedented levels of 0.08 and 0.32 mum, respectively. The submicrometer features of our arrays are patter ned using interferometric lithography. Electrical tests of arrays we h ave fabricated have shown a record low turn-on voltage of 8 V for cesi ated molybdenum emitters. Emission current densities of 1600 A/cm2 hav e been obtained, which is also a record for such structures. These arr ays provide large advantages for applications such as flat panel displ ays and microwave devices.