Co. Bozler et al., ARRAYS OF GATED FIELD-EMITTER CONES HAVING 0.32-MU-M TIP-TO-TIP SPACING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 629-632
We have reduced the gate voltage required to achieve a given emission
current density in field-emitter arrays by scaling down the gate-to-ti
p and tip-to-tip spacing to the unprecedented levels of 0.08 and 0.32
mum, respectively. The submicrometer features of our arrays are patter
ned using interferometric lithography. Electrical tests of arrays we h
ave fabricated have shown a record low turn-on voltage of 8 V for cesi
ated molybdenum emitters. Emission current densities of 1600 A/cm2 hav
e been obtained, which is also a record for such structures. These arr
ays provide large advantages for applications such as flat panel displ
ays and microwave devices.