FABRICATION AND CHARACTERIZATION OF SILICON FIELD-EMISSION DIODES ANDTRIODES

I-V characteristics of silicon field emission diode and triode were in vestigated. The maximum emission current of 17 muA and the lowest onse t voltage of 60 V were obtained by an array of 245 silicon tips. The t ypical reverse recovery time of the diode was 350 ps. The typical tran sconductance of the triode was about 10(-7) S. The fabrication process es for forming sharp silicon conical tips with a gate hole diameter 1 mum smaller than the corresponding oxide mask is described. The result s of a high temperature activation process for improving emission char acteristics of the device are presented. The stability and uniformity of the devices affected by the fabrication process and emission enviro nment are also discussed in this paper.