SIO2-INDUCED SILICON EMITTER EMISSION INSTABILITY

Authors
BINTZ WJ MCGRUER NE
Citation
Wj. Bintz et Ne. Mcgruer, SIO2-INDUCED SILICON EMITTER EMISSION INSTABILITY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 697-699
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
697 - 699
Database
ISI
SICI code
1071-1023(1994)12:2<697:SSEEI>2.0.ZU;2-V
Abstract
An emission instability attributed to an oxide layer on a silicon emit ter tip surface has been characterized. The instability leads to a cur rent runaway which often results in device failure. When device failur e does not occur, the instability is a one time event while the device remains in a vacuum environment. The magnitude of the instability inc reases with increasing oxide thickness and can be effectively eliminat ed by etching in buffered HF immediately before testing or device pack aging.