TECHNOLOGICAL PARAMETERS DISTRIBUTION EFFECTS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF FIELD EMITTER ARRAYS

Authors
Citation
D. Nicolaescu, TECHNOLOGICAL PARAMETERS DISTRIBUTION EFFECTS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF FIELD EMITTER ARRAYS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 759-763
Citations number
20
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
12
Issue
2
Year of publication
1994
Pages
759 - 763
Database
ISI
SICI code
1071-1023(1994)12:2<759:TPDEOT>2.0.ZU;2-I
Abstract
Different applications require the development of field emitters array s (FEA). The uniformity of the emitters is an important feature of FEA . The array technological parameters distribution effects on the FEA F owler-Nordheim (FN) current-voltage I(V) plot has been investigated ba sed on the ideal field emitter floating sphere model. The model parame ters are emitter height h, radius R, work function phi, and anode-cath ode planes distance d. The array FN I(V) plot is shown to be modified in a specific way when the parameters R and h vary according to a Gaus sian distribution function (DF). The array representative emitter is d efined and its parameters are obtained through a parameter extraction procedure. Several analytical results are presented for parabolic DF o n R. Further modeling suggestions are given.