ENERGY-DISTRIBUTION OF TUNNELING EMISSION FROM SI-GATE METAL-OXIDE-SEMICONDUCTOR CATHODE

An Si-gate metal-oxide-semiconductor (MOS),electron tunneling cathode was fabricated and its emission characteristics were examined. The emi ssion OCCUrred at a gate voltage higher than the work function of the Si gate by electron tunneling through the potential barrier in the MOS cathode and was stable in the Si-gate cathode. The energy distributio n of emitted electrons was measured and was confirmed to be mainly det ermined by the scattering process of hot electrons in the oxide. The e mission current from the Si-gate MOS cathode was nearly independent of pressure.