TARGET TEMPERATURE PREDICTION FOR PLASMA SOURCE ION-IMPLANTATION

Plasma source ion implantation (PSII) is a plasma-based ion implantati on technique which requires pulsed operation. Because the power incide nt on the implanted objects (targets) can be large, target temperature s can be quite high. Therefore, target temperature prediction can be q uite useful, both in reaching high temperatures when they are desirabl e, and in avoiding high temperatures when they are undesirable. In thi s paper, a simple, time-dependent, lumped-capacity thermal model is de veloped for predicting temperatures in PSII targets. Two simple analyt ical models are used to justify the assumptions used in developing the lumped model. Comparison of the model with measured target temperatur es is used to validate the assumptions of the model. The comparison is favorable.